Bipolar Transistors – BJT NPN Si Transistor Epitaxial KSC3503DSTU
Overview:
The KSC3503DSTU is a NPN Epitaxial Silicon Transistor offers 300V low base voltage and 100A collector current. It is suitable for voltage amplifier, current source, CRT display and video output applications.
- High voltage
- 1.8pF at 30V VCB Low reverse transfer capacitance
- Excellent gain linearity for low THD
- 150MHz High frequency
- Complementary to KSC1381
Technical Specifications:
Product Category | Bipolar Transistors – BJT |
Mounting Style | Through Hole |
Package/Case | TO-126-3 |
Transistor Polarity | NPN |
Configuration | Single |
Collector- Emitter Voltage VCEO Max | 300 V |
Collector- Base Voltage VCBO | 300 V |
Emitter- Base Voltage VEBO | 5 V |
Collector-Emitter Saturation Voltage | 600 mV |
Maximum DC Collector Current | 100 mA |
Pd – Power Dissipation | 7 W |
Gain Bandwidth Product fT | 150 MHz |
Minimum Operating Temperature | – 55 C |
Maximum Operating Temperature | KSC3503 |
Series | 10 |
Brand | onsemi / Fairchild |
Height | 11 mm |
Length | 8 mm |
KSC3503DSTU Data Sheet
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