Bipolar Transistors – BJT NPN Si Transistor Epitaxial KSC3503DSTU

Overview:

The KSC3503DSTU is a NPN Epitaxial Silicon Transistor offers 300V low base voltage and 100A collector current. It is suitable for voltage amplifier, current source, CRT display and video output applications.

High voltage
1.8pF at 30V VCB Low reverse transfer capacitance
Excellent gain linearity for low THD
150MHz High frequency
Complementary to KSC1381

Technical Specifications:

Product Category	Bipolar Transistors – BJT
Mounting Style	Through Hole
Package/Case	TO-126-3
Transistor Polarity	NPN
Configuration	Single
Collector- Emitter Voltage VCEO Max	300 V
Collector- Base Voltage VCBO	300 V
Emitter- Base Voltage VEBO	5 V
Collector-Emitter Saturation Voltage	600 mV
Maximum DC Collector Current	100 mA
Pd – Power Dissipation	7 W
Gain Bandwidth Product fT	150 MHz
Minimum Operating Temperature	– 55 C
Maximum Operating Temperature	KSC3503
Series	10
Brand	onsemi / Fairchild
Height	11 mm
Length	8 mm