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Bipolar Transistors – BJT NPN Si Transistor Epitaxial KSC3503DSTU
₹38.00
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Bipolar Transistors – BJT NPN Si Transistor Epitaxial KSC3503DSTU
Overview:
The KSC3503DSTU is a NPN Epitaxial Silicon Transistor offers 300V low base voltage and 100A collector current. It is suitable for voltage amplifier, current source, CRT display and video output applications.
- High voltage
- 1.8pF at 30V VCB Low reverse transfer capacitance
- Excellent gain linearity for low THD
- 150MHz High frequency
- Complementary to KSC1381
Technical Specifications:
| Product Category | Bipolar Transistors – BJT |
| Mounting Style | Through Hole |
| Package/Case | TO-126-3 |
| Transistor Polarity | NPN |
| Configuration | Single |
| Collector- Emitter Voltage VCEO Max | 300 V |
| Collector- Base Voltage VCBO | 300 V |
| Emitter- Base Voltage VEBO | 5 V |
| Collector-Emitter Saturation Voltage | 600 mV |
| Maximum DC Collector Current | 100 mA |
| Pd – Power Dissipation | 7 W |
| Gain Bandwidth Product fT | 150 MHz |
| Minimum Operating Temperature | – 55 C |
| Maximum Operating Temperature | KSC3503 |
| Series | 10 |
| Brand | onsemi / Fairchild |
| Height | 11 mm |
| Length | 8 mm |
KSC3503DSTU Data Sheet
| Weight | 50 g |
|---|---|
| Brand | |
| JAN |
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