Central Semiconductor – 2N3019 – Bipolar Transistors – BJT NPN Gen Pur SS
Overview:
The CENTRAL SEMICONDUCTOR 2N3019 is NPN silicon transistors designed for generalpurpose amplifier applications.
Technical Specifications:
Type: | Bipolar Transistors – BJT |
RoHS: | RoHS |
Mounting Style: | Through Hole |
Package / Case: | TO-39 |
Transistor Polarity: | NPN |
Configuration: | Single |
Collector- Emitter Voltage VCEO Max: | 80 V |
Collector- Base Voltage VCBO: | 140 V |
Emitter- Base Voltage VEBO: | 7 V |
Collector-Emitter Saturation Voltage: | 500 mV |
Maximum DC Collector Current: | 1 A |
Gain Bandwidth Product fT: | 100 MHz |
Maximum Operating Temperature: | + 200 C |
Continuous Collector Current: | 1 A |
DC Collector/Base Gain hfe Min: | 40 at 150 mA, 10 V |
Reviews
There are no reviews yet.