Central Semiconductor – 2N3019 – Bipolar Transistors – BJT NPN Gen Pur SS
Overview:
The CENTRAL SEMICONDUCTOR 2N3019 is NPN silicon transistors designed for generalpurpose amplifier applications.
Technical Specifications:
| Type: | Bipolar Transistors – BJT |
| RoHS: | RoHS |
| Mounting Style: | Through Hole |
| Package / Case: | TO-39 |
| Transistor Polarity: | NPN |
| Configuration: | Single |
| Collector- Emitter Voltage VCEO Max: | 80 V |
| Collector- Base Voltage VCBO: | 140 V |
| Emitter- Base Voltage VEBO: | 7 V |
| Collector-Emitter Saturation Voltage: | 500 mV |
| Maximum DC Collector Current: | 1 A |
| Gain Bandwidth Product fT: | 100 MHz |
| Maximum Operating Temperature: | + 200 C |
| Continuous Collector Current: | 1 A |
| DC Collector/Base Gain hfe Min: | 40 at 150 mA, 10 V |



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