Fairchild-BC556BTF Bipolar Transistors BJT PNP Si Transistor Epitaxial
Technical Specifications:
| Type | Bipolar Transistors – BJT |
| RoHS | RoHS |
| Mounting Style | Through Hole |
| Package / Case | TO-92-3 Kinked Lead |
| Transistor Polarity | PNP |
| Configuration | Single |
| Collector- Emitter Voltage VCEO Max | -65 V |
| Collector- Base Voltage VCBO | -80 V |
| Emitter- Base Voltage VEBO | -6 V |
| Collector-Emitter Saturation Voltage | -250 mV |
| Maximum DC Collector Current | -0.1 A |
| Gain Bandwidth Product fT | 150 MHz |
| Maximum Operating Temperature | + 150 C |
| Continuous Collector Current | -0.1 A |
| DC Collector/Base Gain hfe Min | 110 |
| DC Current Gain hFE Max | 800 |
| Minimum Operating Temperature | – 65 C |
| Pd – Power Dissipation | 0.5 W |
| Unit Weight | 240 mg |






Reviews
There are no reviews yet.