Fairchild-BC556BTF Bipolar Transistors BJT PNP Si Transistor Epitaxial
Technical Specifications:
Type | Bipolar Transistors – BJT |
RoHS | RoHS |
Mounting Style | Through Hole |
Package / Case | TO-92-3 Kinked Lead |
Transistor Polarity | PNP |
Configuration | Single |
Collector- Emitter Voltage VCEO Max | -65 V |
Collector- Base Voltage VCBO | -80 V |
Emitter- Base Voltage VEBO | -6 V |
Collector-Emitter Saturation Voltage | -250 mV |
Maximum DC Collector Current | -0.1 A |
Gain Bandwidth Product fT | 150 MHz |
Maximum Operating Temperature | + 150 C |
Continuous Collector Current | -0.1 A |
DC Collector/Base Gain hfe Min | 110 |
DC Current Gain hFE Max | 800 |
Minimum Operating Temperature | – 65 C |
Pd – Power Dissipation | 0.5 W |
Unit Weight | 240 mg |
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