ON Semiconductor – MJW21193G – Bipolar Transistors – BJT 16A 250V 200W PNP
Features:
- Total Harmonic Distortion Characterized
- High DC Current Gain
- Excellent Gain Linearity
- High SOA
- These Devices are Pb−Free and are RoHS Compliant
Technical Specifications:
Manufacturer | ON Semiconductor |
Product Category | Bipolar Transistors – BJT |
RoHS | RoHS |
Brand | ON Semiconductor |
Configuration | Single |
Transistor Polarity | PNP |
Collector- Base Voltage VCBO | 400 V |
Collector- Emitter Voltage VCEO Max | 250 V |
Emitter- Base Voltage VEBO | 5 V |
Collector-Emitter Saturation Voltage | 1.4 V |
Maximum DC Collector Current | 16 A |
Gain Bandwidth Product fT | 4 MHz |
Maximum Operating Temperature | + 150 C |
Mounting Style | Through Hole |
Package / Case | TO-247-3 |
DC Collector/Base Gain hfe Min | 20 |
DC Current Gain hFE Max | 80 |
Maximum Power Dissipation | 200 W |
Minimum Operating Temperature | – 65 C |
Packaging | Tube |
Series | MJW21193 |
PDF Catalog Page Click Here
Datasheet Click Here
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