ON Semiconductor – MJL21193G – Bipolar Transistors – BJT 16A 250V 200W PNP
Features:
- Total Harmonic Distortion Characterized
- High DC Current Gain
- Excellent Gain Linearity
- High SOA
- These Devices are Pb−Free and are RoHS Compliant*
Technical Specifications:
| Manufacturer | ON Semiconductor |
| Product Category | Bipolar Transistors – BJT |
| RoHS | RoHS |
| Brand | ON Semiconductor |
| Configuration | Single |
| Transistor Polarity | PNP |
| Collector- Base Voltage VCBO | 400 V |
| Collector- Emitter Voltage VCEO Max | 250 V |
| Emitter- Base Voltage VEBO | 5 V |
| Collector-Emitter Saturation Voltage | 1.4 V |
| Maximum DC Collector Current | 16 A |
| Gain Bandwidth Product fT | 4 MHz |
| Maximum Operating Temperature | + 150 C |
| Mounting Style | Through Hole |
| Package / Case | TO-264-3 (TO-3BPL) |
| DC Collector/Base Gain hfe Min | 25 |
| Maximum Power Dissipation | 200 W |
| Minimum Operating Temperature | – 65 C |
| Packaging | Tube |
| Series | MJL21193 |
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