Toshiba – 2SA1943-O- Bipolar Transistor – BJT PNP 230V 15A
Features:
- High collector voltage: VCEO = -230 V (min)
- Complementary to 2SC5200N
- Recommended for 150-W high-fidelity audio frequency amplifier output stage
Technical Specifications:
| Manufacturer | Toshiba |
| Product Category | Bipolar Transistors – BJT |
| RoHS | RoHS |
| Brand | Toshiba |
| Configuration | Triple |
| Transistor Polarity | PNP |
| Collector- Base Voltage VCBO | – 230 V |
| Collector- Emitter Voltage VCEO Max | – 230 V |
| Emitter- Base Voltage VEBO | – 5 V |
| Collector-Emitter Saturation Voltage | -1.1 V |
| Maximum DC Collector Current | – 15 A |
| Gain Bandwidth Product fT | 30 MHz |
| Maximum Operating Temperature | + 150 C |
| Mounting Style | Through Hole |
| Package / Case | TO-3P |
| DC Collector/Base Gain hfe Min | 35 |
| DC Current Gain hFE Max | 160 |
| Maximum Power Dissipation | 150 W |
| Minimum Operating Temperature | – 55 C |
Datasheet:
To download datasheet please click Here.





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