Toshiba – 2SC4793 – Bipolar Transistors – BJT NPN 230V 1A
Features:
- High collector voltage: VCEO = 230 V (min)
- Complementary to 2SA1943N
- Recommended for 150-W high-fidelity audio frequency amplifier output stage
Technical Specifications:
Manufacturer | Toshiba |
Product Category | Bipolar Transistors – BJT |
RoHS | RoHS |
Brand | Toshiba |
Configuration | Single |
Transistor Polarity | NPN |
Collector- Base Voltage VCBO | 230 V |
Collector- Emitter Voltage VCEO Max | 230 V |
Emitter- Base Voltage VEBO | 5 V |
Maximum DC Collector Current | 1 A |
Gain Bandwidth Product fT | 100 MHz |
Maximum Operating Temperature | + 150 C |
Continuous Collector Current: | 1 A |
Mounting Style | Through Hole |
Package / Case | TO-220-3 FP |
DC Collector/Base Gain hfe Min | 100 |
DC Current Gain hFE Max | 320 |
Minimum Operating Temperature | – 55 C |
Packaging: | Tube |
Pd – Power Dissipation: | 2 W |
Product Manuals / Spec Sheets / Downloads:
To download datasheet, Please click Here.
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