Toshiba – 2SC4793 – Bipolar Transistors – BJT NPN 230V 1A
Features:
- High collector voltage: VCEO = 230 V (min)
- Complementary to 2SA1943N
- Recommended for 150-W high-fidelity audio frequency amplifier output stage
Technical Specifications:
| Manufacturer | Toshiba |
| Product Category | Bipolar Transistors – BJT |
| RoHS | RoHS |
| Brand | Toshiba |
| Configuration | Single |
| Transistor Polarity | NPN |
| Collector- Base Voltage VCBO | 230 V |
| Collector- Emitter Voltage VCEO Max | 230 V |
| Emitter- Base Voltage VEBO | 5 V |
| Maximum DC Collector Current | 1 A |
| Gain Bandwidth Product fT | 100 MHz |
| Maximum Operating Temperature | + 150 C |
| Continuous Collector Current: | 1 A |
| Mounting Style | Through Hole |
| Package / Case | TO-220-3 FP |
| DC Collector/Base Gain hfe Min | 100 |
| DC Current Gain hFE Max | 320 |
| Minimum Operating Temperature | – 55 C |
| Packaging: | Tube |
| Pd – Power Dissipation: | 2 W |
Product Manuals / Spec Sheets / Downloads:
To download datasheet, Please click Here.





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